Electron microscopic evidence was presented for the dislocation-relaxation of stresses near to InAs quantum dots buried in GaAs. It was found that dislocation defects which did not emerge at the film surface were formed in some buried quantum dots. This suggested that stress relaxation occurred in the buried state of the quantum dot, rather than at the stage of formation and growth of an InAs island on the GaAs surface.

Formation of Dislocation Defects in the Process of Burying of InAs Quantum Dots into GaAs. N.A.Bert, A.L.Kolesnikova, V.N.Nevedomsky, V.V.Preobrazhenskii, M.A.Putyato, A.E.Romanov, V.M.Seleznev, B.R.Semyagin, V.V.Chaldyshev: Semiconductors, 2009, 43[10], 1387-93