The origin and evolution of surface microstructures in GaAs layers grown onto Ge/Si1− xGex /Si substrates were studied. Characteristic surface microstructures formed in pairs. By correlating the results of atomic force microscopy and cross-sectional transmission electron microscopy, the paired surface microstructures were identified as being {111} stacking faults that propagated at 54° with respect to the substrate surface. The stacking faults originated from the single-stepped GaAs/Ge hetero-interface, as a result of in situ annealing of the Ge surface. The surface microstructure density became lower, and the mean lateral size larger, when the GaAs thickness was increased from 0.54 to 1.11µm.

Study of Surface Microstructure Origin and Evolution for GaAs Grown on Ge/Si1−xGex/Si Substrate. K.P.Chen, S.F.Yoon, T.K.Ng, H.Tanoto, K.L.Lew, C.L.Dohrman, E.A.Fitzgerald: Journal of Physics D, 2009, 42[3], 035303