A nitrogen-related electron trap, at about 0.3eV from the conduction band minimum of n-type GaAsN grown by chemical beam epitaxy, was confirmed by using deep-level transient spectroscopy and the nitrogen concentration dependence of its density. It had a high capture cross-section and was not observed in N-free n-type GaAs. Its density increased markedly with increasing N, survived post thermal annealing and was found to be quasi-uniformly distributed in the bulk of the GaAsN. Based upon first-principles calculations, the electron trap was deduced to be associated with a split interstitial defect formed from N and As atoms on the same As lattice site (As–N)As.

Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy. B.Bouzazi, H.Suzuki, N.Kojima, Y.Ohshita, M.Yamaguchi: Applied Physics Express, 2010, 3[5], 051002