Deep level transient spectroscopy and Laplace deep level transient spectroscopy were used to characterize electron traps in dilute GaAsN epitaxial layers grown by molecular beam epitaxy onto n+ GaAs substrates. The GaAsN samples used in this study were silicon doped (n-type) and contained nitrogen concentrations ranging from 0.2% to 1.2%. The number of electron traps in each sample detected by the deep level transient spectroscopy measurements was found to be dependent on the nitrogen contents. Some of the traps were identified with previously reported (N-As)spl split interstitial, nitrogen-split interstitial, EL6-like interfacial defect and EL3 defect levels. In a control sample without nitrogen only one deep electron emitting level of energy 0.76eV was observed and no shallow levels were seen. However, new shallow traps with energies ranging from 0.036 to 0.13eV were detected in samples with nitrogen contents in the range of 0.2 to 0.4%.

Electrical Properties of Nitrogen-Related Defects in n-Type GaAsN Grown by Molecular-Beam Epitaxy. M.Shafi, R.H.Mari, M.Henini, D.Taylor, M.Hopkinson: Physica Status Solidi C, 2009, 6[12], 2652-4