An experimental approach to obtaining phase purity in nanowires by molecular beam epitaxy was presented. Superlattice heterostructured nanowires were grown which consisted of alternating layers of GaAsP and GaP. An observed core/multi-shell heterostructure, which extended axially and radially, was attributed to simultaneous Au-assisted vertical growth and diffusion-limited radial growth along lateral nanowire facets. Growth interruptions at the GaAsP/GaP interfaces permitted the elimination of stacking faults and the growth of nanowires having a monocrystalline wurtzite phase.

A Growth Interruption Technique for Stacking Fault-Free Nanowire Superlattices. P.K.Mohseni, R.R.LaPierre: Nanotechnology, 2009, 20[2], 025610