Optically detected magnetic resonance measurements were carried out to study formation of Ga interstitial-related defects in Ga(In)NAs alloys. The defects, which were among dominant non-radiative recombination centers that controlled carrier lifetime in Ga(In)NAs, were unambiguously proven to be common grown-in defects in these alloys independent of the employed growth methods. The defects formation was suggested to become thermodynamically favourable because of the presence of nitrogen, possibly due to local strain compensation.

Dominant Recombination Centers in Ga(In)NAs Alloys - Ga Interstitials. X.J.Wang, Y.Puttisong, C.W.Tu, A.J.Ptak, V.K.Kalevich, A.Y.Egorov, L.Geelhaar, H.Riechert, W.M.Chen, I.A.Buyanova: Applied Physics Letters, 2009, 95[24], 241904