Variations in minority carrier transport properties associated with networks of misfit dislocations were measured, in p-type GaInP grown on Ge, using a unique optical technique. The diffusion length of minority carriers was measured to a spatial resolution of 0.4µm in regions exhibiting alternating light and dark luminescence bands. Periodic variations of ±4% from a mean diffusion length of 3.9µm were measured, and found to be anti-correlated to intensity fluctuations. A model based upon the coupling between luminescence intensity and minority carrier lifetime permitted the extraction of spatial variation of both radiative and non-radiative lifetimes.

Minority Carrier Lifetime Variations Associated with Misfit Dislocation Networks in Heteroepitaxial GaInP. N.M.Haegel, S.E.Williams, C.L.Frenzen, C.Scandrett: Semiconductor Science and Technology, 2010, 25[5], 055017