The vacancy-type defects in (Ga,Mn)N films grown by metal organic chemical vapour deposition were studied by positron annihilation technique. Doppler broadening spectra were measured for the films. Compared to the undoped GaN film, the positron trapping defects in the (Ga,Mn)N films were changed to a new type of defect and its concentration increased with increasing Mn concentration. By analyzing the S-W correlation plots and previous results, this type of defect was identified in the (Ga,Mn)N as a VN-MnGa complex.

Positron Annihilation in (Ga, Mn)N - a Study of Vacancy-Type Defects. X.L.Yang, W.X.Zhu, C.D.Wang, H.Fang, T.J.Yu, Z.J.Yang, G.Y.Zhang, X.B.Qin, R.S.Yu, B.Y.Wang: Applied Physics Letters, 2009, 94[15], 151907