Molecular dynamics simulations were used to investigate the dynamics of surface morphology and point defects during energetic Ar atom bombardment of wurtzite-type GaN (00•1) crystal surfaces. Atoms of Ar with energies of 151, 250 or 500eV were impinged 30 times. The N atoms were preferentially sputtered, as compared with the Ga atoms. The latter were mainly sputtered with N atoms, in pairs. Vacancies of Ga and N were generated as Schottky defects, which were often paired. Frenkel defects were generated only in the case of Ga atoms. There were no N interstitials within the crystal. The Ga atoms were mobile and could exist as interstitials. The number of Ga vacancies was very similar to that of N vacancies, in the depth direction.

Point Defects Induced by Physical Sputtering in Wurtzite-Type GaN Crystal. K.Harafuji, K.Kawamura: Japanese Journal of Applied Physics, 2010, 49[1], 011001