N–K edge near edge X-ray absorption fine structure spectroscopy was used to study implantation-induced changes in the electronic structure of GaN. The samples were implanted with 700keV In ions to fluences of 5 x 1013 to 1016/cm2. The X-ray absorption fine structure results were combined with Rutherford back-scattering characterization, which assessed the implantation-induced damage. The main implantation effects upon the fine structure spectra were a fluence-dependent broadening of the N–K edge near edge X-ray absorption fine structure peaks, the emergence of a pre-edge shoulder (RL1) that was attributed to N split-interstitials and the appearance of a post-edge sharp peak (RL2) that was attributed to molecular N2 trapped in the GaN matrix. The RL2 was characterized by a fine structure due to vibronic transitions that resulted from a change in the vibrational quantum number together with the electronic transition.

N–K Edge NEXAFS Study of the Defects Induced by Indium Implantation in GaN. M.Katsikini, F.Pinakidou, E.C.Paloura, E.Wendler, W.Wesch, R.Manzke: Journal of Physics - Conference Series, 2009, 190[1], 012065