An investigation was made of the type, spatial distribution, line direction, and electronic properties of dislocations in n-type GaN by scanning tunnelling microscopy. Uncharged perfect dislocations with a/3{11•0} Burgers vectors were found, and negatively charged Shockley partial dislocations with a/3{1¯1•0} Burgers vectors interconnected by a negatively charged stacking fault. The charges were traced to different charge transfer levels associated with the particular core structure.

Electronic Properties of Dislocations in GaN Investigated by Scanning Tunneling Microscopy. P.Ebert, L.Ivanova, S.Borisova, H.Eisele, A.Laubsch, M.Dähne: Applied Physics Letters, 2009, 94[6], 062104