Basal-plane stacking faults in a non-polar (11•0) GaN epilayer were studied using high-resolution electron microscopy and off-axis electron holography. The microstructure of the basal-plane stacking faults was deduced, from high-resolution transmission electron microscopic images, to be I1 type. High-resolution holograms along the [11•0] zone axis were obtained by off-axis electron holography in a Cs-corrected transmission electron microscope providing ~2Å spatial resolution in the reconstructed amplitude and phase images. Phase fluctuations across the stacking faults were detected, suggesting the presence of a built-in electric field.

Basal-Plane Stacking Faults in Non-Polar GaN Studied by Off-Axis Electron Holography. L.Z.Y.Liu, D.V.S.Rao, M.J.Kappers, C.J.Humphreys, D.Geiger: Journal of Physics - Conference Series, 2010, 209[1], 012012