A study was made of the effects of a juxtaposition of a shallow donor nucleus and an I1-type basal stacking fault. A numerical calculation was made, in the so-called effective-potential formalism, of the energies and envelope functions of electrons submitted to the conjunction of attractive potentials caused by the basal stacking fault and the donor. It was shown that the donor localized the electron along the plane of the basal stacking fault; even when the donor was as far as 10nm from the basal stacking fault. The presence of the basal stacking fault enhanced the donor binding energy by a factor of up to 1.8 when the donor was placed exactly on the basal stacking fault.

Electron Localization by a Donor in the Vicinity of a Basal Stacking Fault in GaN. P.Corfdir, P.Lefebvre, J.Ristić, J.D.Ganière, B.Deveaud-Plédran: Physical Review B, 2009, 80[15], 153309