A coherent GaN quantum dot with an adjacent pure edge threading dislocation was simulated by using a finite element method. The piezo-electric effects and the strain-modified band edges were investigated within the framework of multi-band kp theory in order to calculate the electron and heavy hole energy levels. The linear optical absorption coefficients corresponding to the interband ground state transition were obtained via the density matrix approach and perturbation expansion method. The results indicated that the strain distribution of the threading dislocation affected the electronic structure. The ground state transition behaviour was also influenced by the position of the adjacent threading dislocation.

Electronic and Optical Properties of GaN/AlN Quantum Dots with Adjacent Threading Dislocations. H.Ye, P.F.Lu, Z.Y.Yu, W.J.Yao, Z.H.Chen, B.J.Jia, Y.M.Liu: Chinese Physics B, 2010, 19[4], 047302