The local electrical resistivities in deformed n-GaP were measured by scanning spreading resistance microscopy. The latter images showed chain-like alignments of spots with high resistivity along the slip direction. These spots could be attributed to carrier-depletion around a charged dislocation. From the observed spot size, the line charge density of the dislocations was estimated to be 0.4–0.9e/b, where b denotes the magnitude of the Burgers vector. The estimated value of line charge density was discussed in relation with the dislocation core structure.

Direct Observation of Carrier Depletion around a Dislocation in GaP by Scanning Spreading Resistance Microscopy. T.Yokoyama, R.Takenaka, Y.Kamimura, K.Edagawa, I.Yonenaga: Applied Physics Letters, 2009, 95[20], 202108