The surface evolution of GaP on Si substrates, in the initial growth stages, was investigated using atomic force microscopy. The GaP was grown onto 4°-misoriented Si substrates at 700 to 830C using metalorganic vapour phase epitaxy. Island growth predominated below a nominal 5nm thickness at 830C. Several antiphase domains grew to be 100nm or longer at a nominal 5nm deposition. They were 5nm higher than the surrounding islands. The surrounding islands formed a layer at a nominal thickness above 5nm. The layer grew faster vertically than did the antiphase domains. Several antiphase domains grew laterally until the layer-thickness exceeded the antiphase domain height. The layer finally embedded the antiphase domains. Self-annihilation of antiphase domains occurred below 40nm in thickness. Similar surface evolution were found at 770 and 800C. The antiphase domain size decreased with decreasing temperature. Self-annihilation of antiphase domains occurred below 20nm at 770C.

Surface Evolution of GaP Grown on Si Substrates Using Metalorganic Vapor Phase Epitaxy. Y.Takano, T.Takagi, Y.Matsuo, S.Fuke: Japanese Journal of Applied Physics, 2010, 49[3], 035502