Radiative recombination mechanisms in Sn-doped GaS were investigated by means of photoluminescence measurements. The photoluminescence spectrum at 77K appeared in the energy region between 1.25 and 2.3eV, and was dominated by two emission bands. The temperature dependence of the full-width at half-maximum and the shapes of the photoluminescence spectra of the two emission bands were characterized by the recombination mechanism of the configurational coordinate model. The two emission bands were related to complex centers involving vacancies and impurity atoms.

Temperature Dependence of Photoluminescence in Layered Semiconductor n-GaS Doped with Sn. S.Shigetomi, T.Ikari: Japanese Journal of Applied Physics, 2010, 49[5], 050201