Radiative recombination mechanisms in Ge-doped GaS were investigated by means of photoluminescence measurements. The photoluminescence spectrum at 77K, related to the impurity levels, was dominated by emission bands at 2.30 and 1.96eV. From the temperature dependences of the photoluminescence intensity and peak energy, it was found that a 2.30eV emission band was due to a transition between donor and acceptor levels. The 1.96eV emission band was related to the donor–vacancy complex center.

Photoluminescence Studies of Layered Semiconductor GaS Doped with Ge. S.Shigetomi, T.Ikari: Japanese Journal of Applied Physics, 2009, 48[3], 030211