Epilayers of GaSb and InSb grown on GaAs (001) vicinal substrates misoriented towards (111) plane were studied using high resolution X-ray diffraction. The results showed that GaSb and InSb epilayers take on positive crystallographic tilt, and the asymmetric distribution of 60° misfit dislocations in {111} glide planes have an effect on the tilt. In addition, the vicinal substrate influences the distribution of the threading dislocations in {111} glide planes, and the density of dislocation in the (111) plane was higher than in the (¯1¯11) plane. A model was proposed to interpret the distribution of full width at half maximum, which could aid the understanding of the formation and glide process of the dislocations.

Distribution of Dislocations in GaSb and InSb Epilayers Grown on GaAs (001) Vicinal Substrates. M.Li, Y.Qiu, G.Liu, Y.Wang, B.Zhang, L.Zhao: Journal of Applied Physics, 2009, 105[9], 094903