Photoluminescence characterization of Czochralski-grown Te-doped GaSb wafers was presented. Calculations of the photoluminescence line shape of Te-doped GaSb wafers at 77K were performed. It was demonstrated that the photoluminescence line shape analysis could be used for the estimation of native defect concentration. The n-type wafers with the doping level from 2 x 1017 to 2 x 1018/cm3 were studied. The doping level obtained from the photoluminescence data was correlated with the results of the Hall mobility measurements. The native defect concentration was obtained with the help of the developed analysis. A comparative study of photovoltaic cells manufactured from different wafers was presented. Changes in the recombination-related current flow components, spectral photoresponse curves and fill factor values revealed strong correlation with the obtained native defect concentration values.

Native Defect Concentration in Czochralski-Grown Te-Doped GaSb by Photoluminescence. A.S.Vlasov, E.P.Rakova, V.P.Khvostikov, S.V.Sorokina, V.S.Kalinovsky, M.Z.Shvarts, V.M.Andreev: Solar Energy Materials and Solar Cells, 2010, 94[6], 1113-7