Boron diffusion in crystalline Ge was investigated by means of proton bombardment of B delta-doped thin layers to fluences of 1015 to 1016/cm2, and fluxes of 6 x 1011 to 3.5 x 1012/cm2 s, at implanted-target temperatures of -196 to 550C; both during and after irradiation. The B migration was enhanced by several orders of magnitude with respect to equilibrium. Also, B diffusion was shown to occur via a point-defect mediated mechanism; compatible with a kick-out process.

Mechanism of B Diffusion in Crystalline Ge under Proton Irradiation. E.Bruno, S.Mirabella, G.Scapellato, G.Impellizzeri, A.Terrasi, F.Priolo: Physical Review B, 2009, 80[3], 033204