Self-diffusion parameters were calculated for elements of the carbon sub-group: C (diamond), Si, Ge, α-Sn and Pb. It was shown that consideration of quantum effects in the delocalization of atoms led to various effects. Below the Debye temperature, the self-diffusion parameters depended strongly upon temperature, and the self-diffusion entropy was negative. With increasing temperature, the self-diffusion entropy took positive values. All of the thermodynamic parameters of self-diffusion in semiconductor crystals of carbon sub-group could be calculated without using any fitting parameters. The temperature dependences of the self-diffusion parameters were studied for Iva sub-group crystals during isobaric heating from 0K to the melting point. Good agreement with experimental data and previous theoretical estimates was found.

Self-Diffusion Parameters in Carbon-Subgroup Crystals. M.N.Magomedov: Semiconductors, 2010, 44[3], 271-84