Deep-level transient spectroscopy and Laplace deep-level transient spectroscopy were used to investigate the defects created in antimony-doped germanium by sputtering with 3keV Ar ions. Hole traps at EV+0.09eV and EV+0.31eV and an electron trap at EC−0.38eV (E-center) were observed soon after the sputtering process. Room temperature annealing of the irradiated samples over a period of a month revealed a hole trap at EV+0.26eV. Above room temperature annealing studies revealed new hole traps at EV+0.27eV, EV+0.30eV and EV+0.40eV.

Characterization of Defects Introduced in Sb Doped Ge by 3keV Ar Sputtering using Deep Level Transient Spectroscopy (DLTS) and Laplace-DLTS (LDLTS). C.Nyamhere, A.G.M.Das, F.D.Auret, A.Chawanda, W.Mtangi, Q.Odendaal, A.Carr: Physica B, 2009, 404[22], 4379-81