It was shown that the solid-phase epitaxial re-growth of amorphous layers created by ion implantation in Ge resulted in the formation of extended defects of interstitial-type. During annealing, these defects evolved in size and density following, as in Si, an Ostwald ripening mechanism. However, this process became non-conservative as the annealing temperature was increased to 600C. This suggested that the recombination/annihilation of Ge interstitial atoms became important at these temperatures. The results had important implications for the modelling of diffusion of implanted dopants in Ge.

End of Range Defects in Ge. S.Koffel, N.Cherkashin, F.Houdellier, M.J.Hytch, G.Benassayag, P.Scheiblin, A.Claverie: Journal of Applied Physics, 2009, 105[12], 126110