The epitaxial growth of Ge thin films onto (100) silicon by DC-pulsed magnetron sputtering was carried out, and investigated using X-ray and electron diffraction techniques. Transmission and high-resolution electron microscopy, performed across the interface region, directly confirmed a high degree of epitaxy and showed that planar defects and threading dislocations were the relevant lattice imperfections. Electron microscopy showed that post-deposition rapid thermal annealing at up to 673K was effective in defect annihilation. The films were monocrystalline and slightly misoriented (< 0.1o). A slight roughness (about 0.6nm) was measured at the Ge/Si interface and at the film surface.

Heteroepitaxial Sputtered Ge on Si (100): Nanostructure and Interface Morphology. S.M.Pietralunga, M.Feré, M.Lanata, D.Piccinin, G.Radnóczi, F.Misják, A.Lamperti, M.Martinelli, P.M.Ossi: EPL, 2009, 88, 28005