Dislocation photoluminescence was measured at 4.2K in p-type germanium single crystals (acceptor concentration Na ~1014/cm3 and density of as-grown dislocations ND ~10/cm2) deformed at 450 and 500C. The effect of isochronal heating of deformed samples on the spectral distribution of the recombination radiation due to regular segments of dissociated 60° dislocations of “relaxed” morphology was studied over the range from 130 to 700C. The substantial redistribution of the photoluminescence intensity after the 500C heating of deformed samples correlates with a decrease of a major portion of deformation-induced point defects. This suggested that the point defect annealing was accompanied by gathering of impurities near 60° dislocation cores and changing of the radiation energy of regular segments of dissociated 60° dislocations.

Dislocation Photoluminescence in Plastically Deformed Germanium. S.A.Shevchenko, A.N.Tereshchenko: Physica B, 2009, 404[23-24], 4540-2