Low temperature irradiation experiments showed a remarkable contrast between Si and Ge, suggesting that the behaviour of self-interstitials and vacancies was very different in the two materials. The present paper reviews theoretical and experimental investigations of the defects in an attempt to understand these differences.

The Self-Interstitial in Silicon and Germanium. R.Jones, A.Carvalho, J.P.Goss, P.R.Briddon: Materials Science and Engineering B, 2009, 159-160, 112-6