Progress in characterizing, understanding and controlling intrinsic point defect generation and clustering during Cz growth of single crystals was discussed. It was shown that intrinsic point defects in Si and Ge behave quite similar and that the observed clustering behaviour could be understood taking into account the impact of extrinsic point defects, doping and strain on the formation, recombination and diffusivity of the intrinsic point defects in both materials.

On Intrinsic Point Defect Cluster Formation during Czochralski Crystal Growth. J.Vanhellemont, P.Spiewak, K.Sueoka, I.Romandic: Physica Status Solidi C, 2009, 6[8], 1906-11