Epi-Ge/Pr2O3/Si(111) layer structures were studied by synchrotron grazing incidence diffraction to analyse the structural perfection of the top epi-Ge and the oxide buffer layer independently. The dominating features for the epi-Ge layer were pronounced streaks of diffuse scattering in the <111> directions that were caused by micro-twins and stacking faults lying in the {111} glide planes, 70.5° tilted with respect to the wafer surface. It was confirmed that grains of type B orientation in the epi-Ge layer were located near to the oxide/Ge interface only. The few nanometres thick Pr2O3 buffer layer showed similar streaks of diffuse scattering indicating a high concentration of structural defects.

Synchrotron X-ray Characterization of Structural Defects in epi-Ge/Pr2O3/Si(111) Layer Stacks. P.Zaumseil, A.Giussani, P.Storck, T.Schroeder: Journal of Physics D, 2009 42[21], 215411