The relaxation-time distribution function and the energy distribution of the density of states of charged defects were calculated for the first time on the basis of experimental isothermal relaxation curves for dark current in thin films of glassy Ge0.285Pb0.15S0.565 semiconductors. The results confirmed the existence of non-Debye dispersion in this system at infra-low frequencies, and could be used for the further study of the electronic properties of disordered semiconductors.

Spectra of Charged Defects in Glassy Ge0.285Pb0.15S0.565 Thin Layers. R.A.Castro, V.A.Bordovsky, N.I.Anisimov, G.I.Grabko: Semiconductors, 2009, 43[3], 365-7