An initial study was made of a new application of deposition-site selective laser back-ablation for making thin films of In2Se3. In vacuo annealing, and characterization of the films using X-ray diffraction and X-ray photo-electron spectroscopy indicated that control of the substrate temperature during deposition and post-deposition annealing temperature was critical in determining the phase and composition of the films. The initial laser fluence and target film thickness determined the amount of material deposited onto the substrate.

Vacancies Ordered in Screw Form (VOSF) and Layered Indium Selenide Thin Film Deposition by Laser Back Ablation. K.M.Beck, W.R.Wiley, E.Venkatasubramanian, F.Ohuchi: Applied Surface Science, 2009, 255[24], 9707-11