Measurements were made of the interface state energy from cyclotron resonance experiments in InAs quantum wells. The cyclotron resonance line splitting and the width oscillations permitted the determination of the energy of the defect states (67 to 72meV) as measured from the bottom of InAs quantum wells for two different samples. This energy coincided very well with the position of the anion-site antisite defects AlSb if the band bending in InAs quantum wells was taken into account.

On the Nature of Defect States at Interfaces of InAs/AlSb Quantum Wells. Y.B.Vasilyev, B.Y.Meltser, S.V.Ivanov, P.S.Kopev: Physica B, 2009, 404[23-24], 5150-2