By using density functional theory calculations of the potential energy surface, together with an analytical solution of the master equation for the time evolution of the adatom site distribution, a study was made of the diffusion properties of an isolated In adatom on InxGa1−xAs wetting layers deposited on GaAs(001). The wetting layer reconstructions considered were, in order of increasing In coverage, c(4 x 4), (1 x 3), (2 x 3), α2(2 x 4) and β2(2 x 4). The dependence of the diffusion properties upon wetting-layer reconstruction, composition and strain, were analyzed and it was found that: diffusion on the (2 x N) reconstructions was strongly anisotropic, due to the presence of the low barrier potential in-dimer trench; favouring diffusion along the [110] direction.

In Adatom Diffusion on InxGa1−xAs/GaAs(001): Effects of Strain, Reconstruction and Composition. M.Rosini, P.Kratzer, R.Magri: Journal of Physics - Condensed Matter, 2009, 21[35], 355007