A dislocation-free InGaAs layer on Si(111) was obtained by using micro-channel selective-area metalorganic vapour phase epitaxy. By increasing the supply of Ga precursor, rotational twins, which had observed in III–V layers on (111) substrates, were removed. From an analysis of the atomic structure, the Ga content in the crystal was found to increase gradually as growth proceeded. This increase resulted in growth in a tilted direction with respect to [111] and to the extinction of twins. It was concluded that a twin-free InGaAs layer could be obtained if a Ga-rich layer were inserted in the middle of growth.

Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy. M.Deura, T.Hoshii, T.Yamamoto, Y.Ikuhara, M.Takenaka, S.Takagi, Y.Nakano, M.Sugiyama: Applied Physics Express, 2009, 2[1], 011101