A two-dimensional network of misfit dislocations at the interface of the partially relaxed Inx Ga1-x As epitaxial layers grown on (001)-oriented GaAs substrates by metalorganic vapour-phase epitaxy was revealed by transmission electron microscopy. A close correspondence between the distribution of interfacial misfit dislocations and undulating surface morphology in the form of a characteristic cross-hatch pattern was observed by means of atomic force microscopy. Anisotropic strain relaxation attributed to the asymmetry in the formation of misfit dislocations was also reproduced on the surface in the form of a fine pattern, cutting the cross-hatched one.

Misfit Dislocations and Surface Morphology of InGaAs/GaAs Heterostructures Grown by MOVPE. L.Gelczuk, M.Dąbrowska-Szata, A.Masalska, E.Lusakowska, P.Dłużewski: Physica Status Solidi C, 2009, 6[8], 1918-21