It was recalled that quantum-well intermixing by the impurity-free vacancy disordering technique was an effective approach for the monolithic integration of opto-electronic devices based upon InGaAs/InP quantum-well structures. The influence of the capping-layer SiO2 and Si3N4 on the quantum-well intermixing by impurity-free vacancy disordering was investigated experimentally. The results showed that, for all of the samples with three types of differently doped (P, N and I) top InP layers, Si3N4 could always induce a larger photoluminescence blue-shift than could SiO2 in the impurity-free vacancy disordering quantum-well intermixing process, which attributed more to the group-III and V vacancy point defects created in the interface of Si3N4/InP than that of SiO2/InP; as proved by the SIMS measurements.

Cap Layer Influence on Impurity-Free Vacancy Disordering of InGaAs/InP Quantum Well Structure. Y.P.An, H.Yang, T.Mei, Y.D.Wang, J.H.Teng, C.D.Xu: Chinese Physics Letters, 2010, 27[1], 017302