An investigation was made of interdiffusion in InGaAsP multiple-quantum-well structures using photoreflectance and photoluminescence measurements. It was found that the degree of compositional intermixing induced by the processes of ion implantation and rapid thermal annealing in multiple quantum well structures could be obtained through the energy shift of the 11H excitonic transition. Besides, the strain relaxation resulting from intermixing was studied through the high order excitonic transitions observed in photoreflectance spectra. It was found that the splitting energy between the 11H and 11L transitions decreased as a result of increasing the degree of intermixing. Based on the theoretical calculation considering the strain effect and the different diffusion ratios between the group-III and group-V atoms, the data analysis were done. It was pointed out that the diffusion coefficients and the ratio of diffusion rates between the group-V and group-III atoms was enhanced by the P+ ion implantation.

Investigations of Interdiffusion in InGaAsP Multiple-Quantum-Well Structures by Photoreflectance. D.Y.Lin, W.C.Lin, F.L.Wu, J.S.Wu, Y.T.Pan, S.L.Lee, Y.S.Huang: Physica Status Solidi A, 2009, 206[5], 791-5