It was found that InGaN quantum-wells, grown onto non-polar m-plane GaN and emitting light at 560nm, underwent lattice-mismatch strain-relaxation via the generation of stacking faults. Each stacking fault terminated a basal plane from the substrate side, thus generating misfit dislocations that had a Burgers vector with a ½[00•1] component.

Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN. A.M.Fischer, Z.Wu, K.Sun, Q.Wei, Y.Huang, R.Senda, D.Iida, M.Iwaya, H.Amano, F.A.Ponce: Applied Physics Express, 2009, 2[4], 041002