InGaP nanowires were grown, using the Au-assisted method, in a gas-source molecular beam epitaxy system. The dependence of the InGaP composition, morphology and stacking-fault density were studied with respect to group-III and V impingement rates and the size of the Au particle. Compositional analysis showed that the nanowires had an In-rich core and a Ga-rich shell structure. Indium incorporation into the nanowires became limited as the Au seed particle size decreased or the group-III and V fluxes decreased. The nanowires had a wurtzite structure with zincblende segments (stacking faults). The density of the stacking faults decreased as the group-III flux decreased and the group-V flux increased.

Dependence of InGaP Nanowire Morphology and Structure on Molecular Beam Epitaxy Growth Conditions. A.Fakhr, Y.M.Haddara, R.R.LaPierre: Nanotechnology, 2010, 21[16], 165601