The origin of bulk electrons in In-face InN was studied by considering the effects of unintentionally incorporated impurities and threading dislocation densities upon electron transport. The concentration of unintentionally incorporated oxygen and hydrogen scaled with the bulk electron concentration while threading dislocations had no discernable effect upon the electron concentration. It was concluded that unintentional impurities were a significant source of electrons while threading dislocations acted only as scattering centers limiting the electron mobility in as-grown InN films. In-face InN growth techniques were presented for controlling the incorporation of oxygen and hydrogen and reducing threading dislocation densities.

The Role of Threading Dislocations and Unintentionally Incorporated Impurities on the Bulk Electron Conductivity of In-Face InN. C.S.Gallinat, G.Koblmüller, J.S.Speck: Applied Physics Letters, 2009, 95[2], 022103