Electronic structures of edge dislocations in InN films were studied using the first-principles calculation. It was found that dangling-bond states of In atoms localized in the dislocation core were located above the conduction-band bottom and thus supplied the electron carriers to the conduction band of bulk InN, in agreement with an experimental suggestion by Wang et al. (2007). Moreover, it was shown that the Fermi energy in the conduction band had a tendency to be pinned at the energy positions of N-related dangling-bond states.

Electron-Carrier Generation by Edge Dislocations in InN Films - First-Principles Study. Y.Takei, T.Nakayama: Journal of Crystal Growth, 2009, 311[10], 2767-71