The first attempt at diffusion control of impurities by infra-red excitation, using an intensive synchrotron radiation facility, was reported. Although the results were discouraging, it was hoped to improve the experiment in the future. It was suggested that the input power employed in the present experiment was not sufficient to observe the intended results.

Control of Impurity Diffusion in Silicon by IR Laser Excitation. K.Shirai, K.Matsukawa, T.Moriwaki, Y.Ikemoto: Physica B, 2009, 404[23-24], 4685-8