Gold diffusion in plastically deformed Si containing dislocation trails was carried out at 700 and 750C. The substitutional gold depth profile was studied by successive sample etching and DLTS profiling. It was observed that the gold concentration in plastically deformed Si was about 10 times higher than that in defect-free Si. Moreover, it was at least 10 times higher than that estimated for the dislocation density revealed in the samples under study. It was concluded that the observed increase in the substitutional gold concentration was associated with defects in the dislocation trails formed behind moving dislocations. It was assumed that both sinks for self-interstitials and traps for interstitial gold present in the samples under study.

Effect of Dislocation Trails on Gold Diffusion in Si. O.V.Feklisova, E.B.Yakimov: Physica Status Solidi C, 2009, 6[8], 1823-6