The efficiency of a cavity band (voids) in reducing B transient enhanced diffusion was studied under silicon-interstitial supersaturation conditions; obtained by high-dose Si implantation. Helium was implanted at 10 or 50keV to a fluence of 5 x 1016/cm2. Conventional (ion implantation, rapid thermal annealing) techniques for introducing and activating B were used in order to highlight the effect of the cavity layer. The samples were characterized using cross-sectional transmission electron microscopy, secondary ion mass spectroscopy and Hall Effect methods. The latter showed that good activation of the B was achieved only after rapid thermal annealing at 1000C, although 900C was sufficient for implantation-damage recovery; as confirmed by cross-sectional transmission electron microscopy. Secondary ion mass spectroscopic B profiles showed that the band of cavities exerted its greatest effect in reducing B transient enhanced diffusion when it was located near to the surface.

Defect Engineering via Ion Implantation to Control B Diffusion in Si. M.Canino, G.Regula, M.Xu, E.Ntzoenzok, B.Pichaud: Materials Science and Engineering B, 2009, 159-160, 338-41