Numerical simulation and analytical modelling were used to show that, for boron, millisecond annealing reduced unwanted dopant spreading by greatly reducing the diffusion time. This more than compensated for an increased concentration of Si interstitials, that promoted dopant spreading. Millisecond annealing also favourably altered the relative balance of boron interstitial versus interstitial cluster sequestration by the lattice, leading to improved electrical activation.

Mechanistic Benefits of Millisecond Annealing for Diffusion and Activation of Boron in Silicon. C.T.M.Kwok, R.D.Braatz, S.Paul, W.Lerch, E.G.Seebauer: Journal of Applied Physics, 2009, 105[6], 063514