A theoretical investigation was made of the suppression of boron diffusion in a silicon substrate, following pre-amorphization implantation, in order to understand the mechanism involved in forming shallow and abrupt junctions. The defect-generating characteristics of silicon atoms as a new species for pre-amorphization implantation were investigated numerically. The kinetic Monte Carlo simulations revealed that Si pre-amorphization implantation produced more interstitials than did Ge pre-amorphization implantation. The latter made interstitials move further towards the surface than did the former during annealing. This resulted in the suppression of boron transient enhanced diffusion.

Kinetic Monte Carlo Study on Boron Diffusion Posterior to Pre-Amorphization Implant Process. S.Y.Park, Y.K.Kim, T.Won: Microelectronic Engineering, 2009, 86[3], 430-3