It was recalled that Cu and Ni diffused very quickly within the Si crystal matrix. Time-dependent changes in the concentrations of Cu and Ni on the Si surface at room temperature were reported here. The changes were evaluated using wet chemical analysis, and it was shown that they resulted from the high diffusivity of Cu and Ni in Si at room temperature. It was also shown that Ni atoms moved independently of the B concentration in Si, and it was possible to predict the diffusion behaviour of Cu and Ni in p-type Si at room temperature on the basis of conventional thermal diffusion theory.

Changes in Concentrations of Copper and Nickel on Boron-Doped Czochralski-Grown Silicon Surface at Room Temperature. R.Takeda, M.Narita, S.Tani-ike, K.Yamabe: Japanese Journal of Applied Physics, 2009, 48[5], 051201