Mössbauer absorption experiments were performed for the first time on Fe-doped Si, under external stresses of up to 44MPa using an Instron-type tensile testing machine, in order to study the stress-induced diffusion of Fe impurities. The Mössbauer spectra were analyzed in terms of two sets of Lorentzians, corresponding to substitutional and interstitial Fe components. The observed spectra changed markedly when a tensile stress was applied to the 57Fe-deposited side. The interstitial line became broader, due to Fe jumps at a jump-rate of 106/s. Line-broadening was also observed for the substitutional component, under the external stress, thus indicating that the stress/strain field mainly affected the iron jumps in the Si matrix.

Iron Diffusion in Silicon under External Stress. K.Suzuki, Y.Yoshida, T.Kamimura, M.Ichino, K.Asahi: Physica B, 2009, 404[23-24], 4678-80