Deposition onto a Si(100) surface, and subsequent self-assembly of In atoms into one-dimensional atomic chains at room temperature, were investigated via kinetic Monte Carlo simulation. The model’s development was guided by recent experimental observations in which one-dimensional In chains were observed to nucleate at C-type defects, although In atoms could detach from the chains. It was found that a monotonically decreasing form of the scaled island size distribution was consistent with a high defect density, which facilitated persistent chain nucleation even at relatively high coverages. The predominance of heterogeneous nucleation was attributed to factors such as low surface-diffusion barriers, a high defect density and relatively weak In–In binding.

A Kinetic Monte Carlo Study on the Role of Defects and Detachment in the Formation and Growth of In Chains on Si(100). M.A.Albao, J.W.Evans, F.C.Chuang: Journal of Physics - Condensed Matter, 2009, 21[40], 405002