A quantitative model was proposed, for the phosphorus-diffusion gettering of iron in silicon, which was based upon the use of a special procedure to fit the experimental data. It was shown that the proposed model permitted a quantitative analysis of the gettering efficiency of iron under various processing conditions.

Modeling Phosphorus Diffusion Gettering of Iron in Single Crystal Silicon. A.Haarahiltunen, H.Savin, M.Yli-Koski, H.Talvitie, J.Sinkkonen: Journal of Applied Physics, 2009, 105[2], 023510